5524澳门24小时线路(中国)有限公司-官方网站

DIP(SOP)23 Description

DIP (SOP) 23 IPM is targeted at applications below 400W, especially for markets that are demanding, cost sensitive, and require a compact, energy efficient market.

The core can be packaged in a complete range of products. In addition to the 500V/2A and 500V/5A specifications of the imported brand, the core can also innovatively build high-power density IGBTs based on the package, and the thickness and thermal conductivity of the insulation layer. Optimized, the XNS50660 is introduced, which achieves high power density and good heat dissipation performance, and can extend the application power to the range of 100W-300W. With superior cost performance, XNS50660A* (A*S) has been widely used in air conditioner outdoor fans, range hoods, hot water circulation pumps, washing and other small power fans and pumps.


DIP(SOP)23 IPM Features and Benefits:

One, high power density:

  • Equipped with a core energy FST (Field stop + Trench) IGBT, which has a lower saturation voltage drop and faster switching speed;
  • The power density is 40% larger than the domestic mainstream planar process, and it can be built into the DIP23 package with up to 6A IGBTs;
  • 12*29mm ultra-small package, can be installed with a heat sink to support 300W applications;

Core Energy DIP (SOP) 23 IPM Size

Second, high integration:
  • Integrated 18 chips, 3 bootstrap diodes, 6 IGBTs, 6 FRDs, 3 driver ICs;
  • 1 IPM can replace more than 30 separate devices;    

Three, high design freedom:

  • Two temperature output solutions (thermistor NTC and temperature voltage VTS) are available. The DIP23 package and product features are compatible with imported brands and can be directly replaced.
  • The same package also has 2A and 5A MOS products, which can cover more power ranges with one board.
  • Provide evaluation boards for test evaluation and provide overall application solutions

Evaluation board

DIP(SOP)23
Parameters

Product

number

Voltage
(V)
Current
(A)

Insulation

withstand

voltage

(KV)

Optimization

Switch

(KHz)
Device

Recommend

power

(W)

Thermal

interface

Bootstrap

diode

Undervoltage

protection

Overcurrent

protection

Temperature

Output

Interlock
VF
(Typ)
(V)
Rth
(j-c)(Max)
(℃/W)
VCE
(SAT)(Typ)
(V)
XNM50360ABS 600 3 1.5 20 MOSFET 120 Plastics Yes Yes No VOT Yes 3 1.5 10
XNM50350ATS 500 3 1.5 20 MOSFET 120 Plastics Yes Yes No NTC Yes 2.6 1.5 6.8
XNM50550ATS 500 5 1.5 20 MOSFET 180 Plastics Yes Yes No NTC Yes 2 1.5 6
XNS50360AT(S) 600 3 1.5 20 IGBT 150 Plastics Yes Yes No NTC Yes 2 1.5 6.5
XNS50360AB(S) 600 3 1.5 20 IGBT 150 Plastics Yes Yes No VOT Yes 2 1.5 6.5
XNS50660AT(S) 600 6 1.5 20 IGBT 200 Plastics Yes Yes No NTC Yes 2.1 1.7 5.5
XNS50660AB(S) 600 6 1.5 20 IGBT 200 Plastics Yes Yes No VOT Yes 2.1 1.7 5.5

Baidu
sogou